Thursday, April 25, 2013

Zinc Oxide Nanowires Transistors Can Be Sophisticated Pressure Sensors | MIT Technology Review

Zinc Oxide Nanowires Transistors Can Be Sophisticated Pressure Sensors | MIT Technology Review: In the new research, Wang’s group demonstrates nanoelectronics that offer at least a 15-fold enhancement in sensor density and spatial resolution compared to the previous approaches... The density, resolution, and sensitivity of the sensors, says Wang, is comparable to that of the skin of a human finger...

In Wang’s nanowire transistors, the gate traditionally used in electronics is eliminated. Instead, the current flowing through the nanowires is controlled by the electrical charge generated when strain or force applied is to the transistors.

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