Tuesday, August 20, 2013

How to Save the Troubled Graphene Transistor | MIT Technology Review

How to Save the Troubled Graphene Transistor | MIT Technology Review:  “We intentionally avoid any attempt to artificially induce an energy band, which would make graphene “more-silicon-like”, they say. Instead they rely on a different phenomenon called negative resistance to create transistor-like behaviour.

Negative resistance is the counterintuitive phenomenon in which a current entering a material causes the voltage across it to drop...

Liu and co can build elementary XOR gates out of only three graphene field-effect transistors compared to the eight or more required using silicon. That translates into a significantly smaller area on a chip. What’s more, graphene transistors can operate at speeds of over 400 GHz.

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