Ferroelectric memristors may lead to brain-like computers: In a new study, a team of researchers from France, the UK, and Japan has demonstrated that a device called a ferroelectric tunnel junction (FTJ) that experiences voltage-controlled resistance variation represents a new class of memristor. Due to the FTJ's quasi-continuous resistance variations exceeding two orders of magnitude, along with its rapid 10-ns operation speed, the device could one day serve as the basic hardware of neuromorphic computational architectures, or computers that function like brains...
"We have conceptualized, designed and realized a completely new type of memristor that performs as well as classical ionic memristors, but operates through an electronic mechanism," coauthor Manuel Bibes, a CNRS research scientist, told Phys.org. "While this should have clear advantages in terms of reproducibility, the key breakthrough is that our ferroelectric memristor behaves according to well-established physical models. This allows a precise understanding of the memristive response, and also opens the door for engineering memristive functions on-demand."
No comments:
Post a Comment